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MT16LD1664A Datasheet(PDF) 11 Page - Micron Technology |
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MT16LD1664A Datasheet(HTML) 11 Page - Micron Technology |
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11 / 27 page  11 8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs Micron Technology, Inc., reserves the right to change products or specifications without notice. DM78.p65 – Rev. 2/99 ©1999, Micron Technology, Inc. 8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes: 5, 6, 7, 8, 9, 12, 29) (VDD = +3.3V ±0.3V) AC CHARACTERISTICS -5 -6 PARAMETER SYMBOL MIN MAX MIN MAX UNITS NOTES Access time from column address tAA 25 30 ns Column-address setup to CAS# tACH 12 15 ns precharge during writes Column-address hold time (referenced to RAS#) tAR 38 45 ns Column-address setup time tASC 0 0 ns Row-address setup time tASR 0 0 ns Column address to WE# delay time tAWD 42 49 ns 23 Access time from CAS# tCAC 13 15 ns 14 Column-address hold time tCAH 8 10 ns CAS# pulse width tCAS 8 10,000 10 10,000 ns CAS# hold time (CBR Refresh) tCHR 8 10 ns 4 CAS# to output in Low-Z tCLZ 0 0 ns Data output hold after CAS# LOW tCOH 3 3 ns CAS# precharge time tCP 8 10 ns 15 Access time from CAS# precharge tCPA 28 35 ns CAS# to RAS# precharge time tCRP 5 5 ns CAS# hold time tCSH 38 45 ns CAS# setup time (CBR Refresh) tCSR 5 5 ns 4 CAS# to WE# delay time tCWD 30 35 ns 23 WRITE command to CAS# lead time tCWL 8 10 ns Data-in hold time tDH 8 10 ns 22 Data-in setup time tDS 0 0 ns 22 Output disable tOD 0 12 0 15 ns Output enable tOE 12 15 ns OE# hold time from WE# during tOEH 8 10 ns READ-MODIFY-WRITE cycle OE# HIGH hold time from CAS# HIGH tOEHC 5 10 ns OE# HIGH pulse width tOEP 5 5 ns OE# LOW to CAS# HIGH setup time tOES 4 5 ns Output buffer turn-off delay tOFF 0 12 0 15 ns 19, 27 OE# setup prior to RAS# tORD 0 0 ns 19 during HIDDEN REFRESH cycle EDO-PAGE-MODE READ or WRITE cycle time tPC 20 25 ns EDO-PAGE-MODE READ-WRITE cycle time tPRWC 47 56 ns Access time from RAS# tRAC 50 60 ns 13 RAS# to column-address delay time tRAD 9 12 ns 17 Row-address hold time tRAH 9 10 ns RAS# pulse width tRAS 50 10,000 60 10,000 ns RAS# pulse width (EDO PAGE MODE) tRASP 50 125,000 60 125,000 ns Random READ or WRITE cycle time tRC 84 104 ns RAS# to CAS# delay time tRCD 11 14 ns 16 READ command hold time (referenced to CAS#) tRCH 0 0 ns 18 READ command setup time tRCS 0 0 ns |
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