©2003 Silicon Storage Technology, Inc.

S71233-01-000

8/03

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

Single 2.7-3.6V Read and Write Operations

•

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

•

20 MHz Max Clock Frequency

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Read Current: 7 mA (typical)

– Standby Current: 8 µA (typical)

•

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

•

Fast Erase and Byte-Program:

– Chip-Erase Time: 70 ms (typical)

– Sector- or Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

•

Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

•

End-of-Write Detection

– Software Status

•

Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

•

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

•

Software Write Protection

– Write protection through Block-Protection bits in

status register

•

Packages Available

– 8-lead SOIC (4.9mm x 6mm)

– 8-contact WSON

PRODUCT DESCRIPTION

SST’s serial flash family features a four-wire, SPI-com-

patible interface that allows for a low pin-count package

occupying less board space and ultimately lowering total

system costs. SST25VF010 SPI serial flash memory is

manufactured with SST’s proprietary, high performance

CMOS SuperFlash Technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability

and

manufacturability

compared

with

alternate

approaches.

The SST25VF010 device significantly improves perfor-

mance, while lowering power consumption. The total

energy consumed is a function of the applied voltage,

current, and time of application. Since for any given volt-

age range, the SuperFlash technology uses less current

to program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less

than

alternative

flash

memory

technologies.

The

SST25VF010 device operates with a single 2.7-3.6V

power supply.

The SST25VF010 device is offered in both 8-lead SOIC

and 8-contact WSON packages. See Figure 1 for the pin

assignments.

1 Mbit SPI Serial Flash

SST25VF010

SST25VF0101 Mb Serial Peripheral Interface (SPI) flash memory