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SST39VF088-70-4I-EKE Datasheet(PDF) 8 Page - Silicon Storage Technology, Inc |
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SST39VF088-70-4I-EKE Datasheet(HTML) 8 Page - Silicon Storage Technology, Inc |
8 / 22 page 8 Preliminary Specifications 8 Mbit Multi-Purpose Flash SST39VF088 ©2003 Silicon Storage Technology, Inc. S71227-04-000 11/03 TABLE 5: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V1 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VILT/VIHT, at f=5 MHz, VDD=VDD Max Read2 15 mA CE#=VIL, OE#=WE#=VIH, all I/Os open Program and Erase 30 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 20 µA CE#=VIHC, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max VIH Input High Voltage 0.7VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T5.1 1227 1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C (room temperature), and VDD = 3V. Not 100% tested. 2. The IDD current listed is typically less than 2mA/MHz, with OE# at VIH. Typical VDD is 3V. TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T6.0 1227 TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T7.0 1227 TABLE 8: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1,2 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a higher minimum specification. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T8.0 1227 |
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