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T10XB60 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # T10XB60
Description  10-AMPERE SILICON BRIDGE RECTIFIER
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T10XB60 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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Maximum Ratings & Characteristics
Single Phase, 60 Hz, Resistive or Inductive Load
Ta = 25ºC Unless Otherwise Specified
CHARACTERISTIC
SYMBOL
T10XB40
T10XB60
T10XB80
UNIT
Peak Repetitive Reverse Voltage
VRRM
400
600
800
V
RMS Reverse Voltage
VR(RMS)
280
420
560
V
Average Rectified Output Current @ TC = 108ºC w/ cooling fin
Io
10.0
A
Average Rectified Output Current @ Ta = 25ºC w/o cooling fin
Io
2.7
A
Non-Repetitive Peak Forward Surge Current
10 mS single half sine-wave superimposed on rated load
IFSM
120
A
Maximum Forward Voltage per Element, IF = 5.0 A
VF
1.05
V
Peak Reverse Current per element at VR = VRRM
IR
10
µA
Operating and Storage Temperature Range
TJ ,Tstg
-40 to +150
°C
Reference Table for Heat-Sink Size
Average Rectified Output Current in Amps
3.0
5.0
7.5
9
11
Cooling Fin Single-face Area S1 (cm
2)
4
75
180
500
900
Cooling Fin Single-face Area S2 (cm
2)
8
65
100
310
490
Note: Vertical Mounting at Ta = 40ºC. HS Material: S1 = 1.5mm-Thick Aluminum, S2 = 3.0mm-Thick Copper
Manufactured by Tianjin Zhong – Huan Semiconductor Co., Ltd.
Rev 0, Sep 2002
T10XB Series (SIP)
10-AMPERE SILICON BRIDGE RECTIFIER
FEATURES
• Low Reverse Leakage Current
• Surge Overload Rating to 120A Peak
• Ideal for Printed Circuit Board Applications
• Epoxy Material – UL Recognition
Flammability Classification 94V-0
Mechanical Data
• Case:
Molded Epoxy Resin
• Terminals: Plated Leads, Solderable
per MIL-STD-202, Method 208
• Polarity: Molded on Body
UNIT: mm


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