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T436416A-6SG Datasheet(PDF) 7 Page - Taiwan Memory Technology

Part # T436416A-6SG
Description  4M X 16 SDRAM
Download  29 Pages
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T436416A-6SG Datasheet(HTML) 7 Page - Taiwan Memory Technology

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TE
CH
tm
T436416A
TM Technology Inc. reserves the right
P. 7
Publication Date: MAY. 2003
to change products or specifications without notice.
Revision: B
OPERATING AC PARAMETER
(AC opterating conditions unless otherwise noted)
Speed Version
Parameter
Symbol
-6
-7
-7.5
-8
-10
Unit
Note
Row active to row active delay
tRRD(min)
12
14
15
16
20
ns
1
RAS to CAS delay
tRCD(min)
16
18
18
20
20
ns
1
Row precharge time
tRP(min)
18
20
20
20
20
ns
1
tRAS(min)
42
42
45
48
50
ns
1
Row active time
tRAS(max)
100K
ns
Row cycle time
tRC(min)
60
63
65
68
70
ns
1
Last data in to new col. Address delay
tCDL(min)
1
CLK
2
Last data in to row precharge
tRDL(min)
2
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. Address to col. Address delay
tCCD(min)
1
CLK
3
CAS latency=3
1
Number of valid output data
CAS latency=2
1
ea
4
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required
with clock cycle time and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
The earliest a precharge command can be issued after a Read command without the loss of data is
CL + BL-2 clocks.


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