2SK1318 datasheet(6/10 Pages) HITACHI

Part #	2SK1318

Description	Silicon N Channel MOS FET High Speed Power Switching

Download	10 Pages

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SK1318

6

500

120

Reverse Drain Current IDR (A)

200

20

0.5

2

10

5

50

100

di/dt = 50 A/

µs

VGS = 0, Ta = 25°C

Pulse Test

0.2

10

5

Body to Drain Diode Reverse

Recovery Time

10,000

20

50

Drain to Source Voltage VDS (V)

1,000

10

30

40

100

0

10

Crss

Coss

Ciss

VGS = 0

f = 1 MHz

Typical Capacitance vs.

Drain to Source Voltage

200

40

100

Gate Charge Qg (nc)

160

40

20

60

80

0

80

120

VDS

20

16

4

0

8

12

VDD = 100 V

50 V

25 V

ID = 20 A

VGS

Dynamic Input Characteristics

25 V

50 V

VDD = 100 V

500

120

Drain Current ID (A)

200

20

0.5

2

10

5

50

100

0.2

10

5

tf

td (on)

tr

VGS = 10 V, PW = 2 µs

duty

1%, VDD

30 V

td (off)

=

.

Switching Characteristics

<

=

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2SK1318 Datasheet(PDF) 6 Page - Hitachi Semiconductor

2SK1318 Datasheet(HTML) 6 Page - Hitachi Semiconductor

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