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FJPF3305 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FJPF3305 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 NPN Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤300µs, Duty Cycle≤2% hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=500µA, IE=0 700 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 9 V ICBO Collector Cut-off Current VCB=700V, IE=0 1 µA IEBO Emitter Cut-off Current VEB=9V, IC=0 1 µA hFE1 hFE2 * DC Current Gain VCE=5V, IC=1A 19 35 VCE=5V, IC=2A 8 40 VCE(sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.2A 0.5 V IC=2A, IB=0.5A 0.6 V IC=4A, IB=1A 1 V VBE(sat) Base-Emitter On Voltage IC=1A, IB=0.2A 1.2 V IC=2A, IB=0.5A 1.6 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 4 MHz Cob Output Capacitance VCB=10V, f=1MHz 65 pF tON Turn On Time VCC=125V, IC=2A=5IB1=-5IB2 RL=62.5Ω 0.8 µs tSTG Storage Time 4 µs tF Fall Time 0.9 µs Classification R O hFE2 19 ~ 28 26 ~ 35 FJPF3305 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator 1 1.Base 2.Collector 3.Emitter TO-220F |
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Similar Description - FJPF3305 |
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