IKW25T120 datasheet(4/15 Pages) INFINEON

Part #	IKW25T120

Description	TRENCHSTOP SERIES

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW25T120

^

TrenchStop Series

Power Semiconductors

4

Preliminary / Rev. 1 Jul-02

Switching Characteristic, Inductive Load,

at Tj=150 °C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

t d( o n)

-50

-

Rise time

t r

-32

-

Turn-off delay time

t d( of f)

-

660

-

Fall time

t f

-

130

-

ns

Turn-on energy

Eon

-3.0

-

Turn-off energy

Eoff

-4.0

-

Total switching energy

Ets

T j =150° C

VCC =600V, IC =25A,

VGE =- 15 /15V,

R G = 2 2Ω ,

L σ

1) =180nH,

C σ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-7.0

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

-

320

-

ns

Diode reverse recovery charge

Q rr

-5.2

-

µC

Diode peak reverse recovery current

I rr m

-29

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr /d t

T j =150° C

VR =600 V, IF =25A,

diF/dt =800A/ µs

-

320

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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