IRHNJ57Z30

Pre-Irradiation

2

www.irf.com

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

30

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.028

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.02

Ω

VGS = 12V, ID = 22A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

16

—

—

S ( )VDS > 15V, IDS = 22A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

10

VDS= 24V ,VGS=0V

——

25

VDS = 24V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

65

VGS =12V, ID = 22A

Qgs

Gate-to-Source Charge

—

—

20

nC

VDS = 15V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

10

Turn-On Delay Time

—

—

25

VDD = 15V, ID = 22A,

tr

Rise Time

—

—

100

VGS =12V, RG = 7.5Ω

Turn-Off Delay Time

—

—

35

tf

Fall Time

—

—

30

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

2054

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

936

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

33

—

nA

➃

nH

ns

µA

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

1.67

RthJ-PCB

Junction-to-PC board

—

6.9

—

soldered to a 2” square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

22*

ISM

Pulse Source Current (Body Diode) ➀

——

88

VSD

Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

102

ns

Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

193

nC

VDD ≤ 25V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

* Current is limited by internal wire diameter