K4D551638D-TC45 datasheet(11/18 Pages) SAMSUNG

Part #	K4D551638D-TC45

Description	256Mbit GDDR SDRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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11 / 18 page

256M GDDR SDRAM

K4D551638D-TC

- 11 -

Rev 1.8 (Oct. 2003)

DC CHARACTERISTICS

Note : 1. Measured with outputs open.

2. Refresh period is 32ms for -TC2A/33/36/40/45 (4K/32ms)

Refresh period is 64ms for -TC50/60 (8K/64ms)

Parameter

Symbol

Test Condition

Version

Unit Note

-2A

-33

-36

-40

-45

-50

-60

Operating Current

(One Bank Active)

ICC1

Burst Lenth=2 tRC

≥ tRC(min)

IOL=0mA, tCC= tCC(min)

TBD

230

220

210

200

145

125

mA

1

Precharge Standby Current

in Power-down mode

ICC2P

CKE

≤ VIL(max), tCC= tCC(min)

70

4

3

mA

Precharge Standby Current

in Non Power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min),

tCC= tCC(min)

TBD

100

90

80

70

30

25

mA

Active Standby Current

power-down mode

ICC3P

CKE

≤ VIL(max), tCC= tCC(min)

TBD

80

75

70

65

55

35

mA

Active Standby Current in

in Non Power-down mode

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min),

tCC= tCC(min)

TBD

150

140

130

120

75

55

mA

Operating Current

( Burst Mode)

ICC4

tRC

≥ tRFC(min)tRC ≥ tRFC(min)

Page Burst, All Banks activated.

TBD

450

430

410

390

250

200

mA

Refresh Current

ICC5

tRC

≥ tRFC(min)

TBD

390

380

370

360

200

180

mA

2

Self Refresh Current

ICC6

CKE

≤ 0.2V

4

3

mA

Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)

1. VID is the magnitude of the difference between the input level on CK and the input level on CK

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same

3. For the K4D551638D-TC2A, VDD & VDDQ = 2.8V+0.1V.

4. For the K4D551638D-TC60, VDD & VDDQ = 2.5V+5%.

Note :

AC INPUT OPERATING CONDITIONS

Recommended operating conditions(Voltage referenced to VSS=0V, VDD=2.6V+ 0.1V, VDDQ=2.6V+ 0.1V ,TA=0 to 65

°C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Input High (Logic 1) Voltage; DQ

VIH

VREF+0.35

-

V

Input Low (Logic 0) Voltage; DQ

VIL

--

VREF-0.35

V

Clock Input Differential Voltage; CK and CK

VID

0.7

-

VDDQ+0.6

V

1

Clock Input Crossing Point Voltage; CK and CK

VIX

0.5*VDDQ-0.2

-

0.5*VDDQ+0.2

V

2

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