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K4D551638D-TC60 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K4D551638D-TC60 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 18 page 256M GDDR SDRAM K4D551638D-TC - 2 - Rev 1.8 (Oct. 2003) Revision History Revision 1.8 (October 6, 2003) • Added Lead free package part number in the data sheet. Revision 1.7 (August 5, 2003) • Added K4D551638D-TC45 in the spec Revision 1.6 (July 21, 2003) • Removed K4D551638D-TC30 from the spec • Added K4D551638D-TC2A in the spec Revision 1.5 (July 14, 2003) • Added K4D551638D-TC30 in the spec Revision 1.4 (June 16, 2003) • Changed tRCDRD of K4D551638D-TC33/36 from 4tCK to 5tCK • Changed tRCDWR of K4D551638D-TC33/36 from 2tCK to 3tCK Revision 1.3 (April 11, 2003) • Added K4D551638D-TC60 in the spec. • Changed AC/DC parameters’ value of K4D551638D-TC50. • Refresh cycle period of K4D551638D-TC50/60 is 8K/64ms. Revision 1.1 (March 21, 2003) • Changed VDD and VDDQ spec from 2.5V+5% to 2.6V+0.1V for all the frequency Revision 1.0 (February 27, 2003) • Changed the CAS Latency (CL) of K4D551638D-TC40 from 3 to 4 • Defined DC spec. Revision 0.0 (January 16, 2003) - Target Spec • Defined Target Specification |
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