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IDT71V2556S200PFI Datasheet(PDF) 6 Page - Integrated Device Technology |
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IDT71V2556S200PFI Datasheet(HTML) 6 Page - Integrated Device Technology |
6 / 28 page 6.42 6 IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges Absolute Maximum Ratings(1) Pin Configuration 256K x 18 100 TQFP Capacitance(1) (TA = +25° C, f = 1.0MHz) NOTES: 1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long as the input voltage is ≥ VIH. 2. Pins 83 and 84 are reserved for future 8M and 16M respectively. 3. Pin 64 does not have to be connected directly to VSS as long as the input voltage is ≤ VIL; on the latest die revision this pin supports ZZ (sleep mode). Top View TQFP NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDD terminals only. 3. VDDQ terminals only. 4. Input terminals only. 5. I/O terminals only. 6. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp up. 7. TA is the "instant on" case temperature. NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. Symbol Rating Commercial & Industrial Values Unit VTERM (2) Terminal Voltage with Respect to GND -0.5 to +4.6 V VTERM (3,6) Terminal Voltage with Respect to GND -0.5 to VDD V VTERM (4,6) Terminal Voltage with Respect to GND -0.5 to VDD +0.5 V VTERM(5,6) Terminal Voltage with Respect to GND -0.5 to VDDQ +0.5 V TA(7) Commerical Operating Temperature -0 to +70 oC Industrial Operating Temperature -40 to +85 oC TBIAS Temperature Under Bias -55 to +125 oC TSTG Storage Temperature -55 to +125 oC PT Power Dissipation 2.0 W IOUT DC Output Current 50 mA 4875 tbl 06 100 99 98 97 969594939291 90 87868584 83 82 81 89 88 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC NC VDDQ VSS NC I/OP2 I/O15 I/O14 VSS VDDQ I/O13 I/O12 VSS VDD I/O11 I/O10 VDDQ VSS I/O9 I/O8 NC NC VSS VDDQ NC NC 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 NC VDDQ VSS NC I/OP1 I/O7 I/O6 VSS VDDQ I/O5 I/O4 VSS VDD I/O3 I/O2 VDDQ VSS I/O1 I/O0 NC NC VSS VDDQ NC NC 4875 drw 02a VDD(1) NC NC VDD(1) NC NC VDD(1) A10 VSS/ZZ(3) , Symbol Parameter (1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 5 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 4875 tbl 07 119 BGA Capacitance(1) (TA = +25° C, f = 1.0MHz) Symbol Parameter (1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 7 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 4875 tbl 07a Symbol Parameter (1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV TBD pF CI/O I/O Capacitance VOUT = 3dV TBD pF 4875 tb l 07b 165 fBGA Capacitance(1) (TA = +25° C, f = 1.0MHz) |
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