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JANTX1N5637 Datasheet(PDF) 1 Page - Microsemi Corporation |
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JANTX1N5637 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2002 11-06-2003 REV A SCOTTSD A L E DIVISION 1N5629 thru 1N5665A DESCRIPTION APPEARANCE This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru 1N5665A are JEDEC registered selections for unidirectional devices. All have the same high Peak Pulse Power rating of 1500 W with extremely fast response times. They are also available in military qualified selections as described in the Features section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. DO-13 (DO-202AA) IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Unidirectional TVS series for thru-hole mounting • Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1) • Clamps transient in less than 100 pico seconds • Working voltage (VWM) range 5 V to 171 V • Hermetic sealed DO-13 metal package • JAN/TX/TXV military qualifications also available for the tighter tolerance “A” suffix devices per MIL-PRF- 19500/500 by adding the JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5629A, etc. • For bidirectional TVS in the same DO-13 package, see separate data sheet for the 1N6036 – 1N6072A series (also military qualified) • Surface mount equivalent packages also available as SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA in separate data sheet (consult factory for other surface mount options) • Plastic axial-leaded equivalents available in the 1N6267 – 1N6303A series in separate data sheet • Protection from switching transients and induced RF • ESD & EFT protection per IEC 61000-4-2 and -4-4 • Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1: 1N5629 to 1N5665A Class 2: 1N5629 to 1N5663A Class 3: 1N5629 to 1N5655A Class 4: 1N5629 to 1N5648A • Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1 : 1N5629 to 1N5658A Class 2: 1N5629 to 1N5651A Class 3: 1N5629 to 1N5643A Class 4: 1N5629 to 1N5636A • Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2: 1N5629 to 1N5642A Class 3: 1N5629 to 1N5635A • Inherently radiation hard per Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • 1500 Watts for 10/1000 µs with repetition rate of 0.01% or less* at lead temperature (TL) 25 oC (See Figs. 1, 2, & 4) • Operating & Storage Temperatures: -65o to +175oC • THERMAL RESISTANCE: 50oC/W junction to lead at 0.375 inches (10 mm) from body or 110 oC/W junction to ambient when mounted on FR4 PC board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm • DC Power Dissipation *: 1 Watt at TL < +125oC 3/8” (10 mm) from body (see derating in Fig 3 and note below) • Forward surge current: 200 Amps for 8.3ms half-sine wave at TA = +25 oC • Solder Temperatures: 260 o C for 10 s (maximum) • CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass • FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026 • POLARITY: Cathode connected to case and polarity indicated by diode symbol • MARKING: Part number and polarity diode symbol • WEIGHT: 1.4 grams. (Approx) • TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number) • See package dimension on last page * TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region). |
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