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PESD5V0V4UW Datasheet(PDF) 5 Page - NXP Semiconductors |
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PESD5V0V4UW Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page 9397 750 14481 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 April 2005 5 of 11 Philips Semiconductors PESDxV4UW series Very low capacitance quadruple ESD protection diode arrays Tamb = 25 °CTamb = 25 °C Fig 3. Peak pulse power dissipation as a function of exponential pulse duration tp; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values f = 1 MHz; Tamb = 25 °C (1) PESD3V3V4UW (2) PESD5V0V4UW PESD3V3V4UW PESD5V0V4UW Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values 006aaa261 tp (µs) 1104 103 10 102 10 102 PPP (W) 1 Tj (°C) 0 200 150 50 100 001aaa633 0.4 0.8 1.2 PPP 0 PPP(25 °C) VR (V) 05 4 23 1 006aaa262 10 12 8 14 16 Cd (pF) 6 (1) (2) 006aaa263 Tj (°C) −100 150 100 050 −50 1 10 IRM at T IRM at 25 °C 10−1 |
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