SI7366DP datasheet(3/5 Pages) VISHAY

Part #	SI7366DP

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si7366DP

Vishay Siliconix

New Product

Document Number: 72296

S-31414—Rev. A, 07-Jul-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.000

0.006

0.012

0.018

0.024

0.030

02468

10

0.000

0.003

0.006

0.009

0.012

0.015

0

1020304050

0

1

2

3

4

5

6

0

3

6

9

12

15

18

21

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

600

1200

1800

2400

3000

0

4

8

12

16

20

Crss

Coss

Ciss

VDS = 10 V

ID = 20 A

VGS = 10 V

ID = 20 A

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

VDS − Drain-to-Source Voltage (V)

ID − Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

1.0

1.2

1

10

60

0.00

0.2

0.4

0.6

0.8

TJ = 25_C

TJ = 150_C

Source-Drain Diode Forward Voltage

VSD − Source-to-Drain Voltage (V)

ID = 20 A

On-Resistance vs. Gate-to-Source Voltage

VGS − Gate-to-Source Voltage (V)

VGS = 10 V

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SI7366DP Datasheet(PDF) 3 Page - Vishay Siliconix

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