SSM6J07FU datasheet(1/5 Pages) TOSHIBA

Part #	SSM6J07FU

Description	TOSHIBA Transistor Silicon P Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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SSM6J07FU

2002-01-24

1

TOSHIBA Transistor Silicon P Channel MOS Type

SSM6J07FU

Power Management Switch

High Speed Switching Applications

· Small package

· Low on resistance

: Ron = 450 mΩ (max) (VGS = −10 V)

: Ron = 800 mΩ (max) (VGS = −4 V)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDS

-30

V

Gate-source voltage

VGSS

±20

V

DC

ID

-0.8

Drain current

Pulse

IDP

-1.6

A

Drain power dissipation

PD (Note1)

300

mW

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

Note 1: Mounted on FR4 board

(25.4 mm

´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm

2 ´ 6)

Marking

Equivalent Circuit

Figure 1:

25.4 mm

´´´´ 25.4 mm ´´´´ 1.6 t,

(top view)

Cu Pad: 0.32 mm

2 ´´´´ 6

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2J1D

Weight: 6.8 mg (typ.)

6

K D F

4

1

2

3

5

4

1

2

3

6

5

0.4 mm

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