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ST180S04P0V Datasheet(PDF) 2 Page - International Rectifier |
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ST180S04P0V Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page ST180S Series 2 Bulletin I25165 rev. C 03/03 www.irf.com ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , max. repetitive V RSM , maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T J = T J max VV mA 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 ST180S 30 I T(AV) Max. average on-state current 200 A 180° conduction, half sine wave @ Case temperature 85 °C I T(RMS) Max. RMS on-state current 314 A DC @ 76°C case temperature I TSM Max. peak, one-cycle 5000 t = 10ms No voltage non-repetitive surge current 5230 t = 8.3ms reapplied 4200 t = 10ms 100% V RRM 4400 t = 8.3ms reapplied Sinusoidal half wave, I 2t Maximum I 2t for fusing 125 t = 10ms No voltage Initial T J = T J max. 114 t = 8.3ms reapplied 88 t = 10ms 100% V RRM 81 t = 8.3ms reapplied I 2 √t Maximum I 2 √t for fusing 1250 KA 2 √s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state slope resistance V TM Max. on-state voltage 1.75 V I pk = 570A, T J = 125°C, t p = 10ms sine pulse I H Maximum holding current 600 I L Max. (typical) latching current 1000 (300) 1.08 (16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max. 1.18 (16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max. 1.14 (I > π x I T(AV) ),T J = T J max. Parameter ST180S Units Conditions 1.14 (I > π x I T(AV) ),T J = T J max. On-state Conduction KA 2s V m Ω mA T J = T J max, anode supply 12V resistive load A di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, t r ≤ 1µs of turned-on current T J = T J max, anode voltage ≤ 80% V DRM Gate current 1A, di g /dt = 1A/µs V d = 0.67% V DRM , T J = 25°C I TM = 300A, T J = T J max, di/dt = 20A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100 Ω, t p = 500µs Parameter ST180S Units Conditions t d Typical delay time 1.0 Switching t q Typical turn-off time 100 µs 1000 A/µs |
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