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STW12NK90Z Datasheet(PDF) 6 Page - STMicroelectronics

Part # STW12NK90Z
Description  N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12NK90Z Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STW12NK90Z
6/14
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
11
44
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 11A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10A, di/dt = 100A/µs,
VDD = 50V, Tj = 25°C
(see Figure 15)
728
7.8
21.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see Figure 15)
964
11
23
ns
µC
A


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