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ST2100C32R2L Datasheet(PDF) 3 Page - International Rectifier |
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ST2100C32R2L Datasheet(HTML) 3 Page - International Rectifier |
3 / 6 page ST2100C..R Series 3 Bulletin I25198 rev. B 02/00 www.irf.com dv/dt Maximum linear rate of rise of off-state voltage I RRM Max. peak reverse and off-state I DRM leakage current 500 V/µs T J = TJ max. to 67% rated VDRM Parameter ST2100C..R Units Conditions 250 mA T J = 125°C rated VDRM /V RRM applied Blocking P GM Maximum peak gate power 150 t p = 100µs P G(AV) Maximum average gate power 10 I GM Max. peak positive gate current 30 A Anode positive with respect to cathode V GM Max. peak positive gate voltage 30 V Anode positive with respect to cathode -V GM Max. peak negative gate voltage 0.25 V Anode positive with respect to cathode I GT Maximum DC gate current required to trigger V GT Maximum gate voltage required to trigger Parameter ST2100C..R Units Conditions W 400 mA T C = 25°C, V DRM = 5V 4V T C = 25°C, VDRM = 5V V GD DC gate voltage not to trigger 0.25 V T C = 125°C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Triggering T J max. Max. operating temperature 125 On-state (conducting) T stg Max. storage temperature range -55 to 125 R thJ-C Thermal resistance, junction 0.019 DC operation single side cooled to case 0.0095 DC operation double side cooled R th(C-h) Thermal resistance, case 0.004 Single side cooled to heatsink 0.002 Double side cooled F Mounting force ± 10% wt Approximate weight 1600 g Case style (R-PUK) See Outline Table Parameter ST2100C..R Units Conditions Thermal and Mechanical Specification °C Clamping force 43KN with mounting compound 43000 (4400) N (Kg) ∆R thJ-C Conduction (The following table shows the increment of thermal resistence R thJ-C when devices operate at different conduction angles than DC) K/W K/W 180° 0.0010 0.0010 T J = T J max. 120° 0.0017 0.0017 K/W 60° 0.0044 0.0044 Conduction angle Single side Double side Units Conditions |
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