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TPR400 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 3 page GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. 55CX, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 875 Watts o2 Maximum Voltage and Current BVces Collector to Base Voltage 55 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 30 Amps Maximum Temperatures Storage Temperature - 65 to + 150 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg η c VSWR Power Out F = 1030-1090 MHz 400 Watts Power Input Vcc = 50 Volts 75 Watts Power Gain 7.27 dB Collector Efficiency 40 % Load Mismatch Tolerance 20:1 PW = 10 µsec DF = 1% F = 1090 MHz BVebo BVces hFE θjc2 Emitter to Base Breakdown Ie = 20 mA 4.0 Volts Collector to Emitter Breakdown Ic = 25 mA 55 Volts DC - Current Gain Ic = 2.5 A, Vce = 5 V 10 100 Thermal Resistance 0.2 C/W o Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue B, February 1998 |
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