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WS256K64-20G4WM Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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WS256K64-20G4WM Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 5 page  2 White Microelectronics • Phoenix, AZ • (602) 437-1520 4 Parameter Symbol Condition Max Unit Output Enable Capacitance COE VIN = 0V, f = 1.0MHz 50 pF Write Enable Capacitance CWE VIN = 0V, f = 1.0MHz 20 pF Chip Select Capacitance CCS VIN = 0V, f = 1.0MHz 20 pF Data I/OCapacitance CI/O VIN = 0V, f = 1.0MHz 20 pF Address Input Capacitance CAD VIN = OV, f = 1.OMHZ 50 pF This parameter is guaranteed by design but not tested. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit Operating Temperature TA -55 +125 °C Storage Temperature TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 Vcc + 0.5 V Junction Temperature TJ 150 °C Supply Voltage VCC -0.5 7.0 V RECOMMENDED OPERATING CONDITIONS CAPACITANCE (TA = +25 °C) DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55 °C to +125°C) Parameter Sym Conditions Units Min Max Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 920 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 68 mA Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 V Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 VCC + 0.3 V Input Low Voltage VIL -0.3 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C TRUTH TABLE CS OE WE Mode Data I/O Power H X X Standby High Z Standby L L H Read Data Out Active L X L Write Data In Active L H H Out Disable High Z Active WS256K64-XG4WX |
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