Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

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▼ Simple Drive Requirement

-40V

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▼ Low On-resistance

40mΩ

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▼ Fast Switching Characteristic

-6A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

50

℃/W

Data and specifications subject to change without notice

200302041

AP9563M

Rating

-40

±25

-6

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Continuous Drain Current

3

-4.8

Pulsed Drain Current

1

-30

2.5

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.02

Storage Temperature Range

Thermal Data

Parameter

Total Power Dissipation

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

S

S

S

G

D

D

D

D

SO-8

G

D

S