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AP9563M Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 4 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -40V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 40mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID -6A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 50 ℃/W Data and specifications subject to change without notice 200302041 AP9563M Rating -40 ±25 -6 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 -4.8 Pulsed Drain Current 1 -30 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Storage Temperature Range Thermal Data Parameter Total Power Dissipation The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S S G D D D D SO-8 G D S |
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