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PHP225NQ04T Datasheet(PDF) 6 Page - NXP Semiconductors |
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PHP225NQ04T Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page Philips Semiconductors PHP/PHB225NQ04T N-channel TrenchMOS™ standard level FET Product data Rev. 01 — 12 May 2004 6 of 13 9397 750 13157 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Tj =25 °CTj =25 °C and 175 °C; VDS > ID xRDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03aq22 0 80 160 240 0 0.5 1 1.5 2 VDS (V) ID (A) Tj = 25 °C VGS = 4 V 10 V 4.5 V 6 V 5.5 V 5 V 9 V 03aq24 0 20 40 60 80 02 46 VGS (V) ID (A) VDS > ID x RDSon Tj = 175 °C 25 °C 03aq23 0 2 4 6 8 10 0 80 160 240 ID (A) RDSon (m Ω) VGS = 5.5 V Tj = 25 °C 10 V 9 V 6 V 03aa27 0 0.5 1 1.5 2 -60 0 60 120 180 Tj ( °C) a a R DSon R DSon 25 C ° () ----------------------------- = |
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