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IRF6619 Datasheet(PDF) 1 Page - International Rectifier |
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IRF6619 Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 2/10/05 IRF6619 DirectFET Power MOSFET Description The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. DirectFET ISOMETRIC MX PD - 96917 Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance Vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching above 1MHz l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction Losses l Compatible with existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS = 24A, VGS =10V. Part not recommended for use above this value. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Notes: SQ SX ST MQ MX MT Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 38nC 13nC 3.5nC 18nC 22nC 2.0V 0 20 406080 100 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 VDS= 16V VDS= 10V ID= 16A MX 2.0 4.0 6.0 8.0 10.0 VGS, Gate-to-Source Voltage (V) 1.0 2.0 3.0 4.0 5.0 6.0 TJ = 25°C TJ = 125°C ID = 30A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V h ID @ TA = 70°C Continuous Drain Current, VGS @ 10V h A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V kÃ(Package Limited) IDM Pulsed Drain Current e EAS (Thermally limited) Single Pulse Avalanche Energy f mJ IAR Avalanche Current Ãe A EAR Repetitive Avalanche Energy e mJ Max. 24 150 240 ±20 20 30 240 See Fig. 14, 15, 17a, 17b, VDSS VGS RDS(on) RDS(on) 20V max ±20V max 1.65m Ω@ 10V 2.2mΩ@ 4.5V |
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