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TFBS5711-TR3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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TFBS5711-TR3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number 82634 Rev. 1.3, 05-Dec-03 VISHAY TFBS5711 Vishay Semiconductors Eye safety information *) Due to the internal limitation measures the device is a "class 1" device. **) IrDA specifies the max. intensity with 500 mW/sr. Electrical Characteristics Transceiver Tamb = 25 °C, VCC1 = VCC2 = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. *) Standard illuminant A **) The typical threshold level is 0.5 x V CC1. It is recommended to use the specified min/max values to avoid increased operating current. Parameter Test Conditions Symbol Min Typ. Max Unit Virtual source size Method: (1-1/e) encircled energy d1.3 1.5 mm Maximum intensity for class 1 IEC60825-1 or EN60825-1, edition Jan. 2001, operating below the absolute maximum ratings Ie *) (500)**) mW/sr Parameter Test Conditions Symbol Min Typ. Max Unit Supply voltage VCC1 2.7 5.5 V Dynamic supply current SD = Low, Ee = 1 klx ICC 550 900 µA Average dynamic supply current, transmitting IIRED = 500 mA, 25 % Duty Cycle ICC 1100 1500 µA Standby supply current SD = High, T = 25 °C, Ee = 0 klx ISD 1 µA SD = High, T = 25 °C, Ee = 1 klx *) ISD 2.5 µA SD = High, T = 85 °C, not ambient light sensitive ISD 5 µA Operating temperature range TA - 25 + 85 °C Output voltage low, Rxd CLoad = 15 pF, IOL = 1 mA VOL 0.4 V Output voltage high, Rxd IOH = - 500 µAVOH 0.8 x VCC1 V IOH = - 250 µA, CLoad = 15 pF VOH 0.9 x VCC1 V Rxd to VCC1 impedance RRxd 400 500 600 k Ω Input voltage low (Txd, SD) VIL - 0.5 0.5 V Input voltage high (Txd, SD) CMOS level**) VIH VCC1 - 0.5 VCC1 + 0.5 V Input leakage current (Txd, SD) Vin = 0.9 x VCC1 IICH - 2 + 2 µA Controlled pull down current SD, Txd = "0" to "1", 0 < Vin < 0.15 VCC1 IIRTx + 150 µA SD, Txd = "0" to "1", Vin > 0.7 VCC1 IIRTx - 1 0 1 µA Input capacitance (Txd, SD) CIN 5pF |
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