W963L6ABN80 datasheet(8/30 Pages) WINBOND

Part #	W963L6ABN80

Description	512K WORD X 16 BIT LOW POWER PSEUDO SRAM

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Manufacturer	WINBOND [Winbond]

Direct Link	http://www.winbond.com

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W963L6ABN

Capacitance

Test conditions: TA = 25°C, f = 1.0 MHz

SYMBOL

DESCRIPTION

TEST SETUP

TYP.

MAX.

UNIT

CIN1

Address Input Capacitance

VIN = 0V

-

5

pF

CIN2

Control Input Capacitance

VIN = 0V

-

5

pF

CIO

Data Input/Output Capacitance

VIO = 0V

-

8

pF

DC Characteristics

(Under Recommended Operating Conditions unless otherwise noted)

notes *1, *2, *3

PARAMETER

SYM.

TEST CONDITIONS

MIN.

MAX.

UNIT

Input Leakage Current

ILI

VIN = VSS to VDD

-1.0

+1.0

µA

Output Leakage Current

ILO

VOUT = VSS to VDD, Output Disable

-1.0

+1.0

µA

VOH (27)

VDD = VDD (27), IOH = -0.5 mA

2.2

-

V

Output High Voltage

Level

VOH (23)

VDD = VDD (23), IOH = -0.5 mA

1.8

-

V

Output Low Voltage Level

VOL

IOL = 1mA

-

0.4

V

(TTL)

IDDS

VDD = VDD Max.,

VIN = VIH or VIL

CE1 = CE2 = VIH

-

3

mA

Standby

Current

(CMOS)

IDDS1

VDD = VDD Max.,

VIN ≤ 0.2V or VIN ≥ VDD -0.2V,

CE1 = CE2

≥ VDD -0.2V

-

70

µA

IDDA1

tRC / tWC =

minimum

-

20

mA

Active Current

IDDA2

VDD = VDD Max.,

VIN = VIH or VIL,

CE1= VIL and CE2 =

VIH, IOUT = 0 mA

tRC / tWC =

1

µS

-

3

mA

Notes

:

*1: All voltages are reference to VSS.

*2: DC Characteristics are measured after following POWER-UP timing.

*3: IOUT depends on the output load conditions.

- 8 -

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