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74LVC1G3157GV Datasheet(PDF) 1 Page - NXP Semiconductors |
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74LVC1G3157GV Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 22 page 1. General description The 74LVC1G3157 is a high-performance, low-power, low-voltage, Si-gate CMOS device that provides superior performance to most advanced CMOS compatible TTL families. The 74LVC1G3157 provides one analog multiplexer/demultiplexer with one digital select input (S), two independent inputs/outputs (B1 and B2) and a common input/output (A). 2. Features s Wide supply voltage range from 1.65 V to 5.5 V s Very low ON-resistance: x 7.5 Ω (typical) at V CC = 2.7 V x 6.5 Ω (typical) at V CC = 3.3 V x 6 Ω (typical) at V CC =5V s Break-before-make switching s High noise immunity s ESD protection: x HBM EIA/JESD22-A114-B exceeds 2000 V x MM EIA/JESD22-A115-A exceeds 200 V s CMOS low-power consumption s Latch-up performance meets requirements of JESD 78 Class I s Direct interface with TTL levels s Control input accepts voltages up to 5 V s Multiple package options s Specified from −40 °C to +85 °C and from −40 °C to +125 °C 3. Quick reference data 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 01 — 7 February 2005 Product data sheet Table 1: Quick reference data GND = 0 V; tr =tf ≤ 2.5 ns; minimum and maximum values at Tamb = −40 °C to +85 °C; typical values at Tamb =25 °C. Symbol Parameter Conditions Min Typ Max Unit tPZH, tPZL turn-on time S to Bn CL = 50 pF; RL = 500 Ω VCC = 3.3 V 0.5 4.0 5.5 ns VCC = 5.0 V 0.5 3.0 4.0 ns tPHZ, tPLZ turn-off time S to Bn CL = 50 pF; RL = 500 Ω VCC = 3.3 V 0.5 3.6 4.5 ns VCC = 5.0 V 0.8 2.9 3.5 ns |
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