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ASB0230 Datasheet(PDF) 2 Page - Anachip Corp |
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ASB0230 Datasheet(HTML) 2 Page - Anachip Corp |
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2 / 3 page  ASB0230 SMD Schottky Barrier Diode Anachip Corp. www.anachip.com.tw Rev. 1.0 Aug 2, 2004 2/3 Maximum Rating (at T A=25ºC unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit VRRM Repetitive peak reverse voltage - - 35 V VR Reverse voltage - - 30 V IO Average forward current - - 200 mA 0603 - 2000 - IFSM Forward current, surge peak 1005 8.3ms single half sine-wave superimposed on rate load (JEDEC method) - 3000 - mA 0603 - - 150 PD Power Dissipation 1005 - - 250 mW TSTG Storage temperature -40 - +125 ºC Tj Junction temperature -40 - +125 ºC Electrical Characteristics (at T A=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward voltage IF=200mADC - - 0.50 V IR Reverse current VR=30V - - 30 µA CT Capacitance between terminals F=1MHz, and 10 VDC reverse voltage - 9 - pF |
Similar Part No. - ASB0230 |
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Similar Description - ASB0230 |
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