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2SD2562 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 1 page 160 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2562 150 150 5 15 1 85(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SD2562 100max 100max 150min 5000min ∗ 2.5max 3.0max 70typ 120typ Unit µA µA V V V MHz pF Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz Darlington 2SD2562 (Ta=25°C) (Ta=25°C) I C– V CE Characteristics (Typical) Safe Operating Area (Single Pulse) 0 0 10 5 15 24 6 Collector-Emitter Voltage V CE(V) I B=0.3mA 0.5mA 0.8mA 2mA 1.0mA 3mA 10mA 1.5mA V CE(sat) – I B Characteristics (Typical) 0 3 2 1 0.2 1 0.5 10 5 200 100 50 Base Current I B(mA) I C=.15A I C=.10A I C=.5A I C– V BE Temperature Characteristics (Typical) 0 15 5 10 0 2 2.2 1 Base-Emittor Voltage V BE(V) (V CE=4V) h FE– I C Characteristics (Typical) Collector Current I C(A) 02 0.5 1 1 0 1 5 5 50000 1000 5000 10000 500 (V CE=4V) Typ 02 0.5 1 1 0 1 5 5 50000 1000 5000 10000 500 (V CE=4V) h FE– I C Temperature Characteristics (Typical) Collector Current I C(A) 125˚C –30˚C 25˚C θj-a–t Characteristics 0.1 1.0 3.0 0.5 1 1 0 100 1000 2000 Time t(ms) f T– I E Characteristics (Typical) (V CE=12V) Emitter Current I E(A) –0.05 –0.02 –01 –0.5 –1 –5 –10 0 40 20 60 80 Pc – T a Derating 100 80 60 40 20 3.5 0 Ambient Temperature Ta(˚C) Without Heatsink 0 2 5 5 0 7 5 100 125 150 External Dimensions FM100(TO3PF) 4.4 1.5 1.5 BE C 5.45±0.1 ø3.3±0.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 15.6±0.2 5.5±0.2 3.45 3.35 0.65 +0.2 -0.1 ±0.2 0.8 a b Weight : Approx 6.5g a. Type No. b. Lot No. sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL ( Ω) 4 IC (A) 10 VBB2 (V) –5 IB2 (mA) –10 ton ( µs) 0.8typ tstg ( µs) 4.0typ tf ( µs) 1.2typ IB1 (mA) 10 VBB1 (V) 10 B C E (70 Ω) Equivalent circuit ∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) |
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