Part Name
         Description
2SD1011

 Silicon NPN epitaxial planer type For low-frequency amplification ( 2 Page)


PANASONIC
100% 
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2
Transistor
2SD1011
PC — Ta
IC — VCE
IC — VBE
VCE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
NV — IC
NV — VCE
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (˚C)
012
10
8
26
4
0
80
60
20
50
70
40
10
30
Ta=25˚C
20
µA
30
µA
40
µA
50
µA
60
µA
80
µA
10
µA
I
B=100µA
Collector to emitter voltage V
CE
(V)
02.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE=10V
Ta=75˚C
–25˚C
25˚C
Base to emitter voltage V
BE
(V)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
25˚C
–25˚C
Ta=75˚C
Collector current I
C
(mA)
0.1
1
10
100
0.3
3
30
0
2000
1600
1200
800
400
V
CE=10V
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(mA)
– 0.1
–1
–10
–100
– 0.3
–3
–30
0
200
160
120
80
40
V
CB=10V
Ta=25˚C
Emitter current I
E
(mA)
1
3
10
30
100
0
6
5
4
3
2
1
I
E=0
f=1MHz
Ta=25˚C
Collector to base voltage V
CB
(V)
0.01
0.03
0.1
0.3
1
0
100
80
60
40
20
V
CE=10V
G
V=80dB
Function=FLAT
Ta=25˚C
5k
Ω
R
g=100kΩ
22k
Ω
Collector current I
C
(mA)
1
3
10
30
100
0
100
80
60
40
20
I
C=1mA
G
V=80dB
Function=FLAT
Ta=25˚C
5k
Ω
R
g=100kΩ
22k
Ω
Collector to emitter voltage V
CE
(V)
1  2 



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