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2SK1095 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part # 2SK1095
Description  Silicon N-Channel MOS FET
Download  3 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1095 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
500
1
100
Drain to Source Voltage VDS (V)
300
30
3
1.0
0.3
1.0
3
10
30
100
10
0.5
Ta = 25°C
1 ms
Operation
in
this
area
is
limited
by
R
DS
(on)
2SK1095
3
1.0
0.1
0.03
0.01
0.3
10
µ
100
µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
θch–c(t) = γ
S(t) · θch–c
θch–c = 4.17°C/W, T
C = 25°C
PDM
PW
T
D =
T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
1 Shot
Pulse
TC = 25°C
0.01
0.05
0.02
0.2
0.1
0.5
D = 1


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