2SB1133 / 2SD1666

No.3031-1/4

Features

•

Wide ASO(Adoption of MBIT process).

•

Micaless package facilitating easy mounting.

•

High reliability.

Specifications

( ) : 2SB1133

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(

V

Collector-to-Emitter Voltage

VCEO

(

V

Emitter-to-Base Voltage

VEBO

(

V

Collector Current

IC

(

A

Collector Current (Pulse)

ICP

(

A

Collector Dissipation

PC

2W

Tc=25

°C25

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−40 to +150

°C

Electrical Characteristics a t Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=(--)40V, IE=0

(--)100

µA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0

(--)100

µA

DC Current Gain

hFE(1)

VCE=(--)5V, IC=(--)0.5A

*70

*280

hFE(2)

VCE=(--)5V, IC=(--)3A

20

Continued on next page.

* : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows :

Rank

Q

R

S

hFE

70 to 140 100 to 200 140 to 280

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN3031A

2SB1133 / 2SD1666

Low-Frequency

General-Purpose Amplifier Applications

Package Dimensions

unit : mm

2041A

[2SB1133 / 2SD1666]

72501 GI IM

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-220ML

1.6

1.2

0.75

10.0

3.2

2.55

2.55

2.4

4.5

2.8

0.7

2.55

2.55

1

23

PNP / NPN Triple Diffused Planar Silicon Transistors