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IS93C86A-3ZI Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS93C86A-3ZI Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 13 page Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1 Rev. 00F 05/26/05 IS93C76A IS93C86A ISSI® Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM Preliminary Information MAY 2005 FUNCTIONAL BLOCK DIAGRAM CS SK DIN DOUT DUMMY BIT R/W AMPS DATA REGISTER ADDRESS REGISTER ADDRESS DECODER WRITE ENABLE HIGH VOLTAGE GENERATOR INSTRUCTION DECODE, CONTROL, AND CLOCK GENERATION EEPROM ARRAY 1024/2048x8 512/1024x16 INSTRUCTION REGISTER FEATURES • Industry-standard Microwire Interface — Non-volatile data storage — Low voltage operation: Vcc = 1.8V to 5.5V -2 Vcc = 2.5V to 5.5V -3 — Full TTL compatible inputs and outputs — Auto increment for efficient data dump • User Configured Memory Organization — By 16-bit or by 8-bit • Hardware and software write protection — Defaults to write-disabled state at power-up — Software instructions for write-enable/disable • Enhanced low voltage CMOS E2PROM technology • Versatile, easy-to-use Interface — Self-timed programming cycle — Automatic erase-before-write — Programming status indicator — Word and chip erasable — Chip select enables power savings • Durable and reliable — 40-year data retention after 1M write cycles — 1 million write cycles — Unlimited read cycles — Schmitt-trigger Inputs • Industrial and Automotive Temperature Grade • Lead-free available DESCRIPTION IS93C76A/86A are 8kb/16kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. IS93C76A/ 86A contains power-efficient read/write memory, and organization of either 1,024/2,048 bytes of 8 bits or 512/1,024 words of 16 bits. When the ORG pin is connected to Vcc or left unconnected, x16 is selected; when it is connected to ground, x8 is selected. An instruction set defines the operation of the devices, including read, write, and mode-enable functions. To protect against inadvertent data modification, all erase and write instructions are accepted only while the device are write-enabled. A selected x8 byte or x16 word can be modified with a single WRITE or ERASE instruction. Additionally, the two instructions WRITE ALL or ERASE ALL can program an entire array. Once a device begins its self-timed program procedure, the data out pin (Dout) can indicate the READY/ BUSY status by raising chip select (CS). The self- timed write cycle includes an automatic erase- before-write capability. The devices can output any number of consecutive bytes/words using a single READ instruction. |
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