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DG441BDY Datasheet(PDF) 2 Page - Vishay Siliconix |
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DG441BDY Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  DG441B/442B Vishay Siliconix New Product www.vishay.com 2 Document Number: 72625 S-32553—Rev. A, 15-Dec-03 ABSOLUTE MAXIMUM RATINGS V+ to V− 44 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V− 25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Inputsa VS, VD (V−) −2 V to (V+) +2 V . . . . . . . . . . . . . . . . . . . . . . . . . . . or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current, S or D (Pulsed 1 ms, 10% duty cycle) 100 mA . . . . . . . . . . . . . . . . . . Storage Temperature −65 to 125_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Package)b 16-Pin Plastic DIPc 470 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Narrow Body SOICd 900 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . QFN-16d 850 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 12 mW/_C above 25_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa FOR DUAL SUPPLIES Test Conditions Unless Otherwise Specified Limits −40 to 85_C Parameter Symbol V+ = 15 V, V− = −15 V, VL = 5 V. VIN = 2.4 V, 0.8 Vf Tempb Mind Typc Maxd Unit Analog Switch Analog Signal Rangee VANALOG Full −15 15 V Drain-Source On-Resistance rDS(on) IS = 1 mA, VD = #10 V Room Full 45 80 95 W On-Resistance Match Between Channelse DrDS(on) IS = 1 mA, VD = "10 V Room Full 2 4 5 W Switch Off IS(off) VD = "14 V VS = #14 V Room Full −0.5 −5 "0.01 0.5 5 Switch Off Leakage Current ID(off) VD = "14 V, VS = #14 V Room Full −0.5 −5 "0.01 0.5 5 nA Channel On Leakage Current ID(on) VS = VD = "14 V Room Full −0.5 −10 #0.02 0.5 10 Digital Control Input Voltage Low VINL Full 0.8 V Input Voltage High VINH Full 2.4 V Input Current VIN Low IINL VIN under test = 0.8 V, All Other = 2.4 V Full −1 −0.01 1 mA Input Current VIN High IINH VIN under test = 2.4 V, All Other = 0.8 V Full −1 0.01 1 mA Dynamic Characteristics Turn-On Time tON RL = 1 kW, CL = 35 pF Room 120 220 Turn-Off Time tOFF RL = 1 kW, CL = 35 pF VS = 10 V, See Figure 2 Room 65 120 ns Charge Injectione Q CL = 1 nF, VS = 0 V, Vgen = 0 V, Rgen = 0 W Room −1 pC Off Isolatione OIRR RL = 50 W, CL = 15 pF, VS = 1 VRMS Room 90 dB Crosstalke (Channel-to-Channel) XTALK RL = 50 W, CL = 15 pF, VS = 1 VRMS f = 100 kHz Room 95 dB Source Off Capacitancee CS(off) f = 1 MHz Room 4 Drain Off Capacitancee CD(off) f = 1 MHz Room 4 pF Channel On Capacitancee CD(on) VS = VD = 0 V, f = 1 MHz Room 16 p Power Supplies Positive Supply Current I+ V+ = 16.5 V, V− = −16.5 V Room Full 1 5 mA Negative Supply Current I− V+ = 16.5 V, V− = −16.5 V VIN = 0 or 5 V Room Full −1 −5 mA |
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