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FQA8N80C Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FQA8N80C Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page ©2003 Fairchild Semiconductor Corporation Rev. A, March 2003 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 µs DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ※ No te s : 1 . Z θ JC ( t ) = 0. 57 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t ) s i n g l e puls e D= 0 . 5 0. 0 2 0. 2 0. 0 5 0. 1 0. 0 1 t 1 , S q uar e W a ve P u l s e D u r a t i o n [ s ec] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 11. Transient Thermal Response Curve t 1 PDM t 2 -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※Notes: 1. V GS = 10 V 2. I D = 4.0 A T J, Junction Temperature [ o C] 25 50 75 100 125 150 0 2 4 6 8 10 T C, Case Temperature [ ℃] Figure 8. On-Resistance Variation vs Temperature |
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