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PBSS5480X Datasheet(PDF) 9 Page - NXP Semiconductors |
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PBSS5480X Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 13 page 2004 Nov 08 9 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 001aaa757 −1 −10−1 VCEsat (V) −10−2 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (3) (2) Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. 001aaa758 −10−1 −10−2 −1 VCEsat (V) −10−3 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. Tamb =25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. 001aaa759 −0.4 −0.8 −1.2 VBEsat (V) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) Fig.12 Base-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. 001aaa760 −0.4 −0.8 −1.2 VBEon (V) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 Fig.13 Base-emitter turn-on voltage as a function of collector current; typical values. Tamb =25 °C; VCE = −2V. |
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