PBSS5480X datasheet(9/13 Pages) PHILIPS

Part #	PBSS5480X

Description	80 V, 4 A PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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9 / 13 page

2004 Nov 08

9

Philips Semiconductors

Product speciﬁcation

80 V, 4 A

PNP low VCEsat (BISS) transistor

PBSS5480X

001aaa757

−1

−10−1

VCEsat

(V)

−10−2

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(3)

(2)

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

001aaa758

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

Fig.11 Collector-emitter saturation voltage as a

function of collector current; typical values.

Tamb =25 °C.

(1) IC/IB = 100.

(2) IC/IB = 50.

(3) IC/IB = 10.

001aaa759

−0.4

−0.8

−1.2

VBEsat

(V)

0

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

Fig.12 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

001aaa760

−0.4

−0.8

−1.2

VBEon

(V)

0

IC (mA)

−10−1

−104

−103

−1

−102

−10

Fig.13 Base-emitter turn-on voltage as a function

of collector current; typical values.

Tamb =25 °C; VCE = −2V.

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