Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

Fast recovery diode

RF601T2D

Applications

Dimensions (Unit : mm)

 Structure

General rectification

Features

1) Cathode common type.(TO-220)

3) Very fast recovery

4) Low switching loss

Construction

Silicon epitaxial planar

Absolute maximum ratings (Ta=25

C)

Symbol

Unit

V

V

Io

A

A

Tj

C

Tstg

C

Electrical characteristic (Ta=25

C)

Symbol

Min.

Typ.

Max.

Unit

-

0.87

0.93

V

Reverse current

-

0.01

10

μA

Reverse recovery time

trr

-

18

25

ns

Parameter

Conditions

Forward voltage

Parameter

Limits

Reverse voltage (repetitive peak)

200

Reverse voltage (DC)

200

Average rectified forward current (*1)

Storage temoerature

55 to 150

(*1)Business frequency, Rating of R-load, Tc=132

CMAX. 1/2 Io per diode

6

Forward current surge peak (60Hz/1cyc)

60

Junction temperature

150

ROHM : ＴO220FN

①

Manufacture Date

1.2

1.3

0.8

(1) (2) (3)

10.0±0.3

　　　 0.1

2.8±0.2

　　　 0.1

4.5±0.3

　　　 0.1

0.7±0.1

0.05

2.6±0.5

①

(1) (2) (3)

1/3

2011.05 - Rev.C