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K4R761869A-GCM8 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K4R761869A-GCM8 Datasheet(HTML) 3 Page - Samsung semiconductor |
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3 / 20 page  Direct RDRAM™ Page 1 K4R761869A Version 1.41 Jan. 2004 Overview The RDRAM device is a general purpose high-perfor- mance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 576Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 32M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1200 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers up to 0.833ns per two bytes (6.7ns per sixteen bytes). The architecture of RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32 banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organiza- tion are general and can be used for additional storage and bandwidth or for error correction. Features ♦ Highest sustained bandwidth per DRAM device - 2.4GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simul- taneously at full bandwidth data rates ♦ Low latency features - Write buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - Interleaved transactions ♦ Advanced power management: - Multiple low power states allows flexibility in power consumption versus time to transition to active state - Power-down self-refresh ♦ Organization: 2kbyte pages and 32 banks, x18 - x18 organization allows ECC configurations or increased storage/bandwidth ♦ Uses Rambus Signaling Level (RSL) for up to 1200MHz operation The 576Mbit RDRAM devices are offered in a CSP hori- zontal package suitable for desktop as well as low-profile add-in card and mobile applications. Key Timing Parameters/Part Numbers Figure 1: Direct RDRAM CSP Package Organization Speed Part Number Bin I/O Freq. MHz tRAC (Row Access Time) ns 1Mx18x32sa a. “32s” - 32 banks which use a “split” bank architecture. -CN1 1200 32 K4R761869A-FbCcN1 b. “F” - WBGA package, “G”- WBGA lead free package. c. “C” - RDRAM core uses normal power self refresh. -CT9 1066 32P K4R761869A-FCT9 -CM8 800 40 K4R761869A-FCM8 1Mx18x32s -CN1 1200 32 K4R761869A-GCN1 -CT9 1066 32P K4R761869A-GCT9 -CM8 800 40 K4R761869A-GCM8 K4R761869A- xCxx SAMSUNG 320 K4R761869A- Cxx SAMSUNG 320 K4R761869A- Cxx SAMSUNG 320 K4R761869A- xCxx SAMSUNG 320 K4R761869A- Cxx SAMSUNG 320 K4R761869A- Cxx SAMSUNG 320 |
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