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KGF1175B Datasheet(PDF) 3 Page - OKI electronic componets |
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KGF1175B Datasheet(HTML) 3 Page - OKI electronic componets |
3 / 8 page 3/8 KGF1175B/1175 ¡ electronic components Item PO Symbol Condition Max. Unit Output power — dBm 2.0 Min. 3.0 — (*1), PIN = –3 dBm Typ. — — Noise figure F (*1) dB Linear gain GLIN dB (Ta = 25°C) — 12.0 — (*1), PIN = –20 dBm Third-order intercept point IP3 dBm — —11 (*1), f2 = 851 MHz VGS(off) Gate-source cut-off voltage –1.0 V –2.0 VDS = 3 V, IDS = 120 mA— IDS(off) Drain-source leakage current 120 mA— VDS = 3 V, VGS = –2.5 V — IGDO Gate-drain leakage current 60 mA— VGD = –8 V — IGSS Gate-source leakage current 12 mA— VGS = –3 V — ID Operating current 2.5 mA — (*1), PIN = –20 dBm — IDSS Drain current — mA 15 VDS = 3 V, VGS = 0 V — — 8— Transconductance gm VDS = 3 V, IDS = 1.5 mA mS ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Item VDS Symbol Condition Max. Unit Drain-source voltage Gate-source voltage Total power dissipation Channel temperature VGS Ptot Tch Ta = 25°C — 7.0 0.4 200 150 V V mW °C Storage temperature Tstg — 125 °C Min. — –3.0 — — –45 Ta = 25°C Ta = 25°C Drain current IDS Ta = 25°C 60 mA — *1 Self-bias condition: VDD = 5.0 V±0.25 V, VG = 0 V, f = 850 MHz |
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Similar Description - KGF1175B |
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