PART NUMBER

NE856M02

2SC5336

PACKAGE OUTLINE

M02

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

µA

1.0

µA

1.0

50

120

250

GHz

6.5

pF

0.5

0.8

dB

12.0

dB

1.1

dB

1.8

3.0

NE856M02

NPN EPITAXIAL SILICON

TRANSISTOR HIGH FREQUENCY

LOW DISTORTION AMPLIFIER

•

HIGH COLLECTOR CURRENT:

100 mA MAX

•

NEW HIGH GAIN POWER MINI-MOLD PACKAGE

(SOT-89 TYPE)

•

HIGH OUTPUT POWER AT 1 dB COMPRESSION:

22 dBm TYP at 1 GHz

•

32 dBm TYP at 1 GHz

FEATURES

PACKAGE OUTLINE M02

DESCRIPTION

The NE856M02 is an NPN silicon epitaxial bipolar transistor

designed for medium power applications requiring high dy-

namic range and low intermodulation distortion. This device

offers excellent performance and reliability at low cost through

NEC's titanium, platinum, gold metallization system and direct

nitride passivation of the surface of the chip. The NE856M02

is an excellent choice for low noise amplifiers in the VHF to UHF

band and is suitable for CATV and other telecommunication

applications.

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

California Eastern Laboratories

BOTTOM VIEW

1.6±0.2

1.5±0.1

0.25±0.02

0.42

±0.06

1.5

0.42

±0.06

0.45

±0.06

C

EB

E

4.5±0.1

3.0