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BLF861A Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLF861A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 2001 Feb 09 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch errors • Source on underside eliminates DC isolators; reducing common mode inductance • Designed for broadband operation (UHF band) • Internal input and output matching for high gain and optimum broadband operation. APPLICATIONS • Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. PINNING - SOT540A PIN DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source connected to flange 5 12 4 3 Top view MBK777 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th =25 °C in a common source 860 MHz test circuit. Note 1. Sync compression: input sync ≥ 33%; output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) η D (%) ∆G p (dB) CW, class-AB 860 32 150 >13.5 typ. 14.5 >50 ≤1 PAL BG (TV); class-AB 860 (ch 69) 32 >150 typ. 170 (peak sync) >14 >40 note 1 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage −±15 V ID drain current (DC) − 18 A Ptot total power dissipation Tmb ≤ 25 °C − 318 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C |
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