2001 Feb 09

2

Philips Semiconductors

Product specification

UHF power LDMOS transistor

BLF861A

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Designed to withstand abrupt load mismatch errors

• Source on underside eliminates DC isolators; reducing

common mode inductance

• Designed for broadband operation (UHF band)

• Internal input and output matching for high gain and

optimum broadband operation.

APPLICATIONS

• Communication transmitter applications in the UHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

push-pull transistor in a SOT540A package with ceramic

cap. The common source is connected to the mounting

flange.

PINNING - SOT540A

PIN

DESCRIPTION

1

drain 1

2

drain 2

3

gate 1

4

gate 2

5

source connected to flange

5

12

4

3

Top view

MBK777

Fig.1 Simplified outline.

QUICK REFERENCE DATA

Note

1. Sync compression: input sync

≥ 33%; output sync 27%.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

η

D

(%)

∆G

p

(dB)

CW, class-AB

860

32

150

>13.5

typ. 14.5

>50

≤1

PAL BG (TV); class-AB

860 (ch 69)

32

>150

typ. 170

(peak sync)

>14

>40

note 1

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±15

V

drain current (DC)

−

18

A

total power dissipation

−

318

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C