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CAT28C010T14I-12T Datasheet(PDF) 1 Page - Catalyst Semiconductor |
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CAT28C010T14I-12T Datasheet(HTML) 1 Page - Catalyst Semiconductor |
1 / 10 page 1 Advanced Information CAT28C010 1024K-Bit CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: 120 ns s Single 5V ± 10% Supply s Low Power CMOS Dissipation: –Active: 40 mA Max. –Standby: 200 µA Max. s Simple Write Operation: –On-Chip Address and Data Latches –Self-Timed Write Cycle with Auto-Clear s Fast Write Cycle Time: –5ms Max s CMOS and TTL Compatible I/O s Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer s End of Write Detection: –Toggle Bit – DATA DATA DATA DATA DATA Polling s Hardware and Software Write Protection s 100,000 Program/Erase Cycles s 100 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges DESCRIPTION The CAT28C010 is a fast,low power, 5V-only CMOS parallel E2PROM organized as 128K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bits signal the start and end of the self-timed write cycle. Additionally, the CAT28C010 features hardware and software write pro- tection. The CAT28C010 is manufactured using Catalyst’s ad- vanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDEC approved 32-pin DIP, PLCC, 32-pin TSOP and 40-pin TSOP packages. BLOCK DIAGRAM 5096 FHD F02 © 1999 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice Doc. No. 25093-00 7/99 P-1 ADDR. BUFFER & LATCHES ADDR. BUFFER & LATCHES INADVERTENT WRITE PROTECTION CONTROL TIMER ROW DECODER COLUMN DECODER HIGH VOLTAGE GENERATOR A7–A16 CE OE WE A0–A6 I/O0–I/O7 I/O BUFFERS 131,072 x 8 E2PROM ARRAY 128 BYTE PAGE REGISTER VCC DATA POLLING AND TOGGLE BIT 128K x 8 |
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