Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

K7A203200B-QC14 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K7A203200B-QC14
Description  64Kx36/x32 Synchronous SRAM
Download  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7A203200B-QC14 Datasheet(HTML) 3 Page - Samsung semiconductor

  K7A203200B-QC14 Datasheet HTML 1Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 2Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 3Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 4Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 5Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 6Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 7Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 8Page - Samsung semiconductor K7A203200B-QC14 Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 16 page
background image
64Kx36/x32 Synchronous SRAM
- 3 -
Rev 2.0
Nov 2003
K7A203200B
K7A203600B
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
The K7A203600B and K7A203200B are 2,359,296-bit Syn-
chronous Static Random Access Memory designed for high
performance second level cache of Pentium and Power PC
based System.
It is organized as 64K words of 36/32 bits and integrates
address and control registers, a 2-bit burst address counter
and added some new functions for high performance cache
RAM applications; GW, BW, LBO, ZZ. Write cycles are inter-
nally self-timed and synchronous.
Full bus-width write is done by GW, and each byte write is
performed by the combination of WEx and BW when GW is
high. And with CS1 high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status
processor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated inter-
nally in the system
′s burst sequence and are controlled by
the burst address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(lin-
ear or interleaved).
ZZ pin controls Power Down State and reduces Stand-by
current regardless of CLK.
The K7A203600B and K7A203200B are fabricated using
SAMSUNG
′s high performance CMOS technology and is
available in a 100pin TQFP package. Multiple power and
ground pins are utilized to minimize ground bounce.
GENERAL DESCRIPTION
FEATURES
LOGIC BLOCK DIAGRAM
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• VDD= 3.3V+0.3V/-0.165V Power Supply.
• VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear
burst.
• Three Chip Enables for simple depth expansion with No Data Cont-
nention ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A .
• Operating in commeical and industrial temperature range.
CLK
LBO
ADV
ADSC
ADSP
CS1
CS2
CS2
GW
BW
WEx
OE
ZZ
DQa0 ~ DQd7
BURST CONTROL
LOGIC
BURST
64Kx36/32
ADDRESS
CONTROL
OUTPUT
DATA-IN
ADDRESS
COUNTER
MEMORY
ARRAY
REGISTER
REGISTER
BUFFER
LOGIC
A
′0~A′1
A0~A1
A0~A15
REGISTER
DQPa ~ DQPd
A2~A15
(x=a,b,c,d)
36/32 or 18
FAST ACCESS TIMES
PARAMETER
Symbol
-14
Unit
Cycle Time
tCYC
7.2
ns
Clock Access Time
tCD
4.0
ns
Output Enable Access Time
tOE
4.0
ns


Similar Part No. - K7A203200B-QC14

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K7A203200B-QC14 SAMSUNG-K7A203200B-QC14 Datasheet
130Kb / 9P
   64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
More results

Similar Description - K7A203200B-QC14

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
KM736V687A SAMSUNG-KM736V687A Datasheet
476Kb / 16P
   64Kx36 Synchronous SRAM
KM736V689A SAMSUNG-KM736V689A Datasheet
449Kb / 15P
   64Kx36 Synchronous SRAM
KM736V689 SAMSUNG-KM736V689 Datasheet
437Kb / 15P
   64Kx36 Synchronous SRAM
K7A403609B SAMSUNG-K7A403609B_06 Datasheet
419Kb / 19P
   128Kx36/x32 & 256Kx18 Synchronous SRAM
K7A403600B SAMSUNG-K7A403600B Datasheet
470Kb / 18P
   128Kx36/x32 & 256Kx18 Synchronous SRAM
K7A403600B SAMSUNG-K7A403600B_06 Datasheet
418Kb / 19P
   128Kx36/x32 & 256Kx18 Synchronous SRAM
K7A203600A SAMSUNG-K7A203600A Datasheet
413Kb / 15P
   64Kx36-Bit Synchronous Pipelined Burst SRAM
DS_K6X8016C3B SAMSUNG-DS_K6X8016C3B Datasheet
130Kb / 9P
   64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
KM736V687 SAMSUNG-KM736V687 Datasheet
461Kb / 15P
   64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP
logo
Hynix Semiconductor
H57V2622GMR-60X HYNIX-H57V2622GMR-60X Datasheet
357Kb / 23P
   256Mb : x32 Dual Die Synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com