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K7N163645M Datasheet(PDF) 10 Page - Samsung semiconductor |
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K7N163645M Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 20 page K7N163645M 512Kx36 & 1Mx18 Pipelined NtRAMTM - 10 - Rev 1.0 January 2000 K7N161845M ASYNCHRONOUS TRUTH TABLE OPERATION ZZ OE I/O STATUS Sleep Mode H X High-Z Read L L DQ L H High-Z Write L X Din, High-Z Deselected L X High-Z Notes 1. X means "Don ′t Care". 2. Sleep Mode means power Sleep Mode of which stand-by current does not depend on cycle time. 3. Deselected means power Sleep Mode of which stand-by current depends on cycle time. ABSOLUTE MAXIMUM RATINGS* *Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. PARAMETER SYMBOL RATING UNIT Voltage on VDD Supply Relative to VSS VDD -0.3 to 3.6 V Voltage on Any Other Pin Relative to VSS VIN -0.3 to 3.6 V Power Dissipation PD 1.6 W Storage Temperature TSTG -65 to 150 °C Operating Temperature TOPR 0 to 70 °C Storage Temperature Range Under Bias TBIAS -10 to 85 °C OPERATING CONDITIONS(0 °C ≤ TA ≤ 70°C) *Note : VDD and VDDQ must be supplied with identical vlotage levels . PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD 2.375 2.5 2.625 V VDDQ 2.375 2.5 2.625 V Ground VSS 0 0 0 V CAPACITANCE*(TA=25 °C, f=1MHz) *Note : Sampled not 100% tested. PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT Input Capacitance CIN VIN=0V - 7 pF Output Capacitance COUT VOUT=0V - 9 pF |
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