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IS61LV12824-8BI Datasheet(PDF) 8 Page - Integrated Silicon Solution, Inc

Part # IS61LV12824-8BI
Description  128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LV12824-8BI Datasheet(HTML) 8 Page - Integrated Silicon Solution, Inc

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IS61LV12824
ISSI®
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-8
-10
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
8
10
ns
tSCE
CE1, CE2 to Write End
7
8
ns
tSCE2
CE2 to Write End
7
8
tAW
Address Setup Time
7
8
ns
to Write End
tHA
Address Hold from Write End
0
0
ns
tSA
Address Setup Time
0
0
ns
tPWE1
WE Pulse Width (OE = HIGH)
6
8
ns
tPWE2
WE Pulse Width (OE = LOW)
6
9
ns
tSD
Data Setup to Write End
4.5
5
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE(2)
WE LOW to High-Z Output
3.5
3.5
ns
tLZWE(2)
WE HIGH to Low-Z Output
3
3
ns
Notes:
1. Test conditions assume signal transition times of 2 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE1, CE2 LOW, CE2 HIGH and WE LOW. All signals must be in valid
states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are
referenced to the rising or falling edge of the signal that terminates the write.


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