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TJA1054AU Datasheet(PDF) 10 Page - NXP Semiconductors |
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TJA1054AU Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 25 page 2004 Mar 23 10 Philips Semiconductors Product specification Fault-tolerant CAN transceiver TJA1054A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); note 1. Notes 1. All voltages are defined with respect to pin GND. Positive current flows into the device. 2. Only relevant if VWAKE <VGND − 0.3 V; current will flow into pin GND. 3. Junction temperature in accordance with “IEC 60747-1”. An alternative definition is: Tvj =Tamb +P × Rth(vj-a) where Rth(vj-a) is a fixed value to be used for the calculation of Tvj. The rating for Tvj limits the allowable combinations of power dissipation (P) and operating ambient temperature (Tamb). 4. Equivalent to discharging a 100 pF capacitor through a 1.5 k Ω resistor. 5. Equivalent to discharging a 200 pF capacitor through a 10 Ω resistor and a 0.75 µH coil. THERMAL CHARACTERISTICS QUALITY SPECIFICATION Quality specification in accordance with “AEC-Q100”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage on pin VCC −0.3 +6 V VBAT battery voltage on pin BAT −0.3 +40 V Vn DC voltage on pins TXD, RXD, ERR, STB and EN −0.3 VCC + 0.3 V VCANH CANH bus line voltage −27 +40 V VCANL CANL bus line voltage −27 +40 V Vtrt(n) transient voltage on pins CANH and CANL see Fig.6 −150 +100 V VWAKE DC input voltage on pin WAKE − VBAT + 0.3 V IWAKE DC input current on pin WAKE note 2 −15 − mA VINH DC output voltage on pin INH −0.3 VBAT + 0.3 V VRTH DC voltage on pin RTH −0.3 VBAT + 1.2 V VRTL DC voltage on pin RTL −0.3 VBAT + 1.2 V RRTH termination resistance on pin RTH 500 16000 Ω RRTL termination resistance on pin RTL 500 16000 Ω Tvj virtual junction temperature note 3 −40 +150 °C Tstg storage temperature −55 +150 °C Vesd electrostatic discharge voltage human body model; note 4 pins RTH, RTL, CANH and CANL −4+4 kV all other pins −2+2 kV machine model; note 5 any pin −300 +300 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 120 K/W Rth(j-s) thermal resistance from junction to substrate bare die in free air 40 K/W |
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