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IKP20N60T Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IKP20N60T Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 15 page IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Power Semiconductors 2 Rev. 2.2 Dec-04 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC TO-220-3-1 TO-247-3-1 TO-263-3-2 0.9 Diode thermal resistance, junction – case RthJCD TO-220-3-1 TO-247-3-1 TO-263-3-2 1.5 Thermal resistance, junction – ambient RthJA TO-220-3-1 TO-247-3-1 TO-263-3-2 (6cm² Cu) 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.2mA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=20A Tj=25 °C Tj=175 °C - - 1.5 1.9 2.05 - Diode forward voltage VF VGE=0V, IF=20A Tj=25 °C Tj=175 °C - - 1.65 1.6 2.05 - Gate-emitter threshold voltage VGE(th) IC=290µA,VCE=VGE 4.1 4.9 5.7 V Zero gate voltage collector current ICES VCE=600V, VGE=0V Tj=25 °C Tj=175 °C - - - - 40 1000 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V, IC=20A - 11 - S Integrated gate resistor RGint - Ω |
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