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IKP20N60T Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # IKP20N60T
Description  IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKP20N60T Datasheet(HTML) 2 Page - Infineon Technologies AG

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IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
2
Rev. 2.2 Dec-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
TO-220-3-1
TO-247-3-1
TO-263-3-2
0.9
Diode thermal resistance,
junction – case
RthJCD
TO-220-3-1
TO-247-3-1
TO-263-3-2
1.5
Thermal resistance,
junction – ambient
RthJA
TO-220-3-1
TO-247-3-1
TO-263-3-2 (6cm² Cu)
62
40
40
K/W
Electrical Characteristic, at Tj = 25
°C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V, IC=0.2mA
600
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=20A
Tj=25
°C
Tj=175
°C
-
-
1.5
1.9
2.05
-
Diode forward voltage
VF
VGE=0V, IF=20A
Tj=25
°C
Tj=175
°C
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
VGE(th)
IC=290µA,VCE=VGE
4.1
4.9
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,
VGE=0V
Tj=25
°C
Tj=175
°C
-
-
-
-
40
1000
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=20A
-
11
-
S
Integrated gate resistor
RGint
-


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