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MG200Q2YS60A Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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MG200Q2YS60A Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page  MG200Q2YS60A 2001-08-28 3 Maximum Ratings (Ta ==== 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 200 Collector current 1 ms ICP 400 A DC IF 200 Forward current 1 ms IFM 400 A Inverter Collector power dissipation (Tc = 25°C) PC 2000 W Control voltage (OT) VD 20 V Fault input voltage VFO 20 V Control Fault input current IFO 20 mA Junction temperature Tj 150 °C Storage temperature range Tstg -40~125 °C Operation temperature range Tope -20~100 °C Isolation voltage Visol 2500 (AC 1 min) V Module Screw torque ¾ 3 (M5) N･m Electrical Characteristics (Tj ==== 25°C) 1. Inverter Stage Characteristics Symbol Test Condition Min Typ. Max Unit VGE = ±20 V, VCE = 0 ¾ ¾ +3/-4mA Gate leakage current IGES VGE = +10 V, VCE = 0 ¾ ¾ 100 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ¾ ¾ 1.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 200 mA 6.0 7.0 8.0 V Tj = 25°C ¾ 2.4 2.8 Collector-emitter saturation voltage VCE (sat) VGE = 15 V, IC = 200 A Tj = 125°C ¾ ¾ 3.2 V Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ¾ 15000 ¾ pF Turn-on delay time td (on) 0.10 ¾ 1.00 Turn-off time toff ¾ ¾ 2.00 Switching time Fall time tf ¾ ¾ 0.50 Reverse recovery time trr VCC = 600 V, IC = 200 A VGE = ±15 V, RG = 10 W (Note 1) ¾ ¾ 0.50 ms Forward voltage VF IF = 200 A ¾ 2.4 2.8 V Note 1: Switching time test circuit & timing chart 2. Control (Tc ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Fault output current OC VGE = 15 V 240 ¾ ¾ A Over temperature OT ¾ 100 ¾ 125 °C Fault output delay time td (Fo) VCC = 600 V, VGE = ±15 V ¾ ¾ 8 ms |
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