Philips Semiconductors

PMV45EN

µTrenchMOS™ enhanced logic level FET

Product data

Rev. 01 — 15 January 2003

6 of 12

9397 750 10894

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain source on-state resistance

factor as a function of junction temperature.

03al03

0

1

2

3

0

0.1

0.2

0.3

0.4

0.5

VDS (V)

ID

(A)

10 V 4.5 V

VGS = 2.2 V

2.6 V

2.4 V

2.9 V

3.1 V

03ak72

0

1

2

3

0123

VGS (V)

ID

(A)

VDS > ID x RDSon

Tj = 150 °C

25

°C

03al04

0

50

100

150

200

0123

ID (A)

RDSon

(m

Ω)

Tj = 25 °C

VGS = 2.7 V

2.9 V

3.1 V

4.5 V

10 V

03al00

0

0.6

1.2

1.8

-60

0

60

120

180

Tj (°C)

a

a

R

DSon

R

DSon 25

°C

()

------------------------------

=