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PMV45EN Datasheet(PDF) 6 Page - NXP Semiconductors |
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PMV45EN Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page Philips Semiconductors PMV45EN µTrenchMOS™ enhanced logic level FET Product data Rev. 01 — 15 January 2003 6 of 12 9397 750 10894 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. 03al03 0 1 2 3 0 0.1 0.2 0.3 0.4 0.5 VDS (V) ID (A) 10 V 4.5 V VGS = 2.2 V 2.6 V 2.4 V 2.9 V 3.1 V 03ak72 0 1 2 3 0123 VGS (V) ID (A) VDS > ID x RDSon Tj = 150 °C 25 °C 03al04 0 50 100 150 200 0123 ID (A) RDSon (m Ω) Tj = 25 °C VGS = 2.7 V 2.9 V 3.1 V 4.5 V 10 V 03al00 0 0.6 1.2 1.8 -60 0 60 120 180 Tj (°C) a a R DSon R DSon 25 °C () ------------------------------ = |
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