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AOD410 Datasheet(PDF) 4 Page - List of Unclassifed Manufacturers

Part # AOD410
Description  N-Channel Enhancement Mode Field Effect Transistor
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AOD410 Datasheet(HTML) 4 Page - List of Unclassifed Manufacturers

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AOD410, AOD410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER M
20
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZ
46
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
5.3
7
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0123
45678
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
Crss
0.1
1.0
10.0
100.0
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=8A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µs
Alpha & Omega Semiconductor, Ltd.


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